GaN semiconductor devicemarket is anticipated to grow at asignificant CAGR of 13.4% during the forecast period (2024-2031). The market growth is attributed to the growing adoption of GaN semiconductor devicesin infrastructure developmentand EV manufacturing, and the rising demand for consumer electronics drivesthe growth of the market. According to the World Semiconductor Trade Statistics (WSTS) Fall 2021 Semiconductor Industry Forecast, global semiconductor industry sales are forecasted to reach $601.0 billion in 2022 and $633.0 billion in 2023.
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Gallium nitride (GaN) device is emerging as the most common choice for power amplifier applications. Demand for widespread 5G deployment and predicted traffic surges are driving up demand for high frequency, high linearity, and affordable GaN power amplifiers.Wide bandgap materials like gallium nitride (GaN) have a lot to offer high-power radio frequency (RF) applications. Several significant physical and electrical features of gallium nitride set it apart from other conventional semiconductors like silicon.Gallium nitride (GaN) material has several additional important applications outside of radiofrequency (RF) applications, like power amplifiers (PA). These devices have grown increasingly desirable owing to their ever-increasing power and efficiency, notably for military-grade radar applications and space applications.
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- Market Coverage
- Market number available for – 2024-2031
- Base year- 2024
- Forecast period- 2024-2031
- Segment Covered- By Source, By Product Type, By Applications
- Competitive Landscape- Archer Daniels Midland Co., Ingredion Inc., Kerry Group Plc, Cargill
- , and others
Market Segmentation
Global GaN Semiconductor Device Market by Product
- GaN Radio Frequency Devices
- Opto-semiconductors
- Power Semiconductors
Global GaN Semiconductor Device Market by Device
- Discrete Semiconductor
- Integrated Semiconductor
Global GaN Semiconductor Device Market by Application
- Lighting & Lasers
- Powers Drives
- Supplies & inverters
- Radio Frequency (RF)
Global GaN Semiconductor Device Market by End-Users
- Automotive
- Consumer Electronics
- Defense & Aerospace
- Healthcare
- Industrial & Power
- Information & Communication Technology
- Others
Regional Analysis
- North America
- United States
- Canada
- Europe
- UK
- Germany
- Italy
- Spain
- France
- Rest of Europe
- Asia-Pacific
- China
- India
- Japan
- South Korea
- Rest of Asia-Pacific
- Rest of the World
- Latin America
- The Middle East & Africa
Company Profiles
- Analog Devices, Inc.
- Broadcom Inc.
- Efficient Power Conversion Corp.
- GaNPower International Inc.
- Infineon Technologies AG
- MACOM Technology Solutions Inc.
- Navitas Semiconductor
- NGK INSULATORS, LTD.
- Panasonic Corp.
- Power Integrations, Inc.
- Qorvo, Inc.
- Semiconductor Components Industries, LLC
- Texas Instruments Inc.
- Transphorm Inc.
- VisIC Technologies Ltd.
The Report Covers
- Market value data analysis of 2023 and forecast to 2031.
- Annualized market revenues ($ million) for each market segment.
- Country-wise analysis of major geographical regions.
- Key companies operating in the global GaN semiconductor devicemarket. Based on the availability of data, information related to new product launches, and relevant news is also available in the report.
- Analysis of business strategies by identifying the key market segments positioned for strong growth in the future.
- Analysis of market-entry and market expansion strategies.
- Competitive strategies by identifying ‘who-stands-where’ in the market.
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