Gallium Nitride Semiconductor Device Market is expected to grow at a considerable rate during the forecast period 2019-2025. Gallium nitride is emerging as a substitute for silicon in various semiconductor devices. Due to its high electron mobility than silicon, gallium nitride is growing the applications. gallium nitride is preferred for high RF (Radio Frequency) devices being used for long-distance transmission of signals. gallium nitride also possesses high thermal dissipation characteristics as compared to conventional SiC (Silicon carbide). With technological advantages, gallium nitride is penetrating in RF semiconductor devices rapidly. Application of semiconductors in various electronic devices is augmenting the growth rate for global gallium nitride semiconductor device market. The rapidly growing use of electronic devices in emerging economies and a steep surge in the electronic industry, development of HEV (Hybrid Electric Vehicles) are some of the major factors contributing significantly in the gallium nitride semiconductor device market. With the technological advancement in communication and medical devices, the market is estimated to generate a huge number of opportunities during the forecast period.
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Geographically, the market is divided into North America, Europe, Asia-Pacific and Rest of the World. North America is leading the global gallium nitride semiconductor device market due to the established electronic industry in the region. Asia-Pacific is estimated to generate huge opportunities during the forecast period due to the growing demand for electronic products. With the presence of significant consumer pool in Asia-Pacific, market players are eyeing the industrial expansion in the region. This will attribute to the substantial CAGR of the region. In addition, Europe constitutes a significant market share due to the increasing semiconductor industry in the region.
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- Market Coverage
- Market number available for – 2024-2030
- Base year- 2023
- Forecast period- 2024-2030
- Segment Covered- By Source, By Product Type, By Applications
- Competitive Landscape- Archer Daniels Midland Co., Ingredion Inc., Kerry Group Plc, Cargill
- , and others
Market Segmentation
Global Gallium Nitride Semiconductor Devices Market by End-User
- Automotive
- Consumer Electronics
- Defense & Military Equipment
- Medical Devices
- Others
Global Gallium Nitride Semiconductor Devices Market by Device Type
- LED
- Transistors
- Nanotubes
Regional Analysis
- North America
- United States
- Canada
- Europe
- UK
- Germany
- Italy
- Spain
- France
- Rest of Europe
- Asia-Pacific
- China
- India
- Japan
- Rest of Asia-Pacific
- Rest of the World
Company Profiles
- Aixtron SE
- ALLOS Semiconductors GmbH
- Cree, Inc.
- Efficient Power Conversion Corp.
- EpiGaN nv
- Everlight Electronics Co. Ltd.
- Fujitsu Ltd.
- GaN Systems, Inc.
- Infineon Technologies AG
- IQE PLC
- MERSEN S.A.
- Mitsubishi Chemical Corp.
- NexGen Power Systems, Inc.
- NTT Advanced Technology Corp.
- NXP Semiconductors N.V.
- Qorvo, Inc.
- Renesas Electronics Corp.
- Texas Instruments, Inc.
- Toshiba Corp.
- Transphorm, Inc.
The Report Covers
- Comprehensive research methodology of the global gallium nitride semiconductor device market
- This report also includes a detailed and extensive market overview with key analyst insights.
- An exhaustive analysis of macro and micro factors influencing the market guided by key recommendations.
- Analysis of regional regulations and other government policies impacting the global gallium nitride semiconductor device market.
- Insights about market determinants which are stimulating the global gallium nitride semiconductor device market.
- Detailed and extensive market segments with regional distribution of forecast revenues.
- Extensive profiles and recent developments of market players.
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